Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors

In this investigation, several dry etching processes have been systematically studied for submicron emitter formation for metamorphic heterojunction bipolar transistor (MHBT) devices. CH4/H2/O2 chemistry is shown to offer better side wall etch profile and smoother surface compared to other gas mixtu...

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Bibliographic Details
Main Authors: Radhakrishnan, K., Wang, Hong
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Language:English
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/14525
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Institution: Nanyang Technological University
Language: English