Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors

• المؤلفون الرئيسيون: Radhakrishnan, K., Wang, Hong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Research Report
• اللغة: English
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/14525

In this investigation, several dry etching processes have been systematically studied for submicron emitter formation for metamorphic heterojunction bipolar transistor (MHBT) devices. CH4/H2/O2 chemistry is shown to offer better side wall etch profile and smoother surface compared to other gas mixtu...