Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)
The main objective of this work is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities. The developed HBT technology will be used for high frequency applications specifically for Monolithic Microwave Integra...
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Format: | Theses and Dissertations |
Language: | English |
Published: |
2009
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Online Access: | http://hdl.handle.net/10356/19580 |
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Institution: | Nanyang Technological University |
Language: | English |