Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)

The main objective of this work is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities. The developed HBT technology will be used for high frequency applications specifically for Monolithic Microwave Integra...

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Bibliographic Details
Main Author: Wang, Hong
Other Authors: Ng, Geok Ing
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/19580
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Institution: Nanyang Technological University
Language: English

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