Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)

Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)

The main objective of this work is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities. The developed HBT technology will be used for high frequency applications specifically for Monolithic Microwave Integra...

Full description

Saved in:
Bibliographic Details
Main Author: Wang, Hong
Other Authors: Ng, Geok Ing
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:http://hdl.handle.net/10356/19580
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:The main objective of this work is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities. The developed HBT technology will be used for high frequency applications specifically for Monolithic Microwave Integrated Circuit (MMIC) applications.

Similar Items