Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)

Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)

The main objective of this work is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities. The developed HBT technology will be used for high frequency applications specifically for Monolithic Microwave Integra...

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Main Author: Wang, Hong
Other Authors: Ng, Geok Ing
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:http://hdl.handle.net/10356/19580
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Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-19580
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spelling sg-ntu-dr.10356-195802023-07-04T15:26:28Z Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) Wang, Hong Ng, Geok Ing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits The main objective of this work is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities. The developed HBT technology will be used for high frequency applications specifically for Monolithic Microwave Integrated Circuit (MMIC) applications. Master of Engineering 2009-12-14T06:16:18Z 2009-12-14T06:16:18Z 1997 1997 Thesis http://hdl.handle.net/10356/19580 en Nanyang Technological University 120 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Wang, Hong
Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)
description The main objective of this work is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities. The developed HBT technology will be used for high frequency applications specifically for Monolithic Microwave Integrated Circuit (MMIC) applications.
author2 Ng, Geok Ing
author_facet Ng, Geok Ing
Wang, Hong
format Theses and Dissertations
author Wang, Hong
author_sort Wang, Hong
title Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)
title_short Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)
title_full Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)
title_fullStr Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)
title_full_unstemmed Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)
title_sort fabrication and characterisation of algaas/gaas heterojunction bipolar transistors (hbts)
publishDate 2009
url http://hdl.handle.net/10356/19580
_version_ 1772826143228952576

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