Development of thin film structures for heterojunction bipolar transistors (HBTs)

• Main Authors: Radhakrishnan, K., Yoon, Soon Fatt., Tse, Man Siu.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• Online Access: http://hdl.handle.net/10356/2936
• Institution: Nanyang Technological University

In this study, MBE growth optimization for producing excellent device quality heterostructures has been reported, starting from single GaAs epi-layer. Based on this experience, several high electron mobility transistor devices have been fabricated and characterized.