Development of thin film structures for heterojunction bipolar transistors (HBTs)
In this study, MBE growth optimization for producing excellent device quality heterostructures has been reported, starting from single GaAs epi-layer. Based on this experience, several high electron mobility transistor devices have been fabricated and characterized.
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Research Report |
| Published: |
2008
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/2936 |
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| Institution: | Nanyang Technological University |