Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology
With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice.
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Research Report |
| Published: |
2008
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/2887 |
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| Institution: | Nanyang Technological University |