Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology

Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology

With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice.

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Bibliographic Details
Main Authors: Tan, Cher Ming., Tse, Man Siu.
Other Authors: Tan, Cher Ming
Format: Research Report
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Online Access:http://hdl.handle.net/10356/2887
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-2887
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spelling sg-ntu-dr.10356-28872023-03-04T03:23:24Z Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology Tan, Cher Ming. Tse, Man Siu. Tan, Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Power electronics With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice. RG 57/98 2008-09-17T09:16:18Z 2008-09-17T09:16:18Z 2003 2003 Research Report http://hdl.handle.net/10356/2887 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Power electronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Tan, Cher Ming.
Tse, Man Siu.
Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology
description With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice.
author2 Tan, Cher Ming
author_facet Tan, Cher Ming
Tan, Cher Ming.
Tse, Man Siu.
format Research Report
author Tan, Cher Ming.
Tse, Man Siu.
author_sort Tan, Cher Ming.
title Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology
title_short Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology
title_full Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology
title_fullStr Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology
title_full_unstemmed Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology
title_sort design and fabrication of insulated gate bipolar transistor (igbt) using wafer bonding technology
publishDate 2008
url http://hdl.handle.net/10356/2887
_version_ 1759856721180753920

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