On-wafer characterization of low frequency noise in advanced III-V heterojunction bipolar transistors (HBTs)
In this project, modification of our current low frequency noise setup by including a probe station to carry out on-wafer low frequency (LF) noise measurement was proposed and performed. Low frequency noise measurements were performed using different devices such as InP-based heterojunction bipola...
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Format: | Research Report |
Language: | English |
Published: |
2008
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Online Access: | http://hdl.handle.net/10356/14174 |
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Institution: | Nanyang Technological University |
Language: | English |