On-wafer characterization of low frequency noise in advanced III-V heterojunction bipolar transistors (HBTs)

• Main Author: Wang, Hong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Language: English
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits; DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: http://hdl.handle.net/10356/14174
• Institution: Nanyang Technological University

In this project, modification of our current low frequency noise setup by including a probe station to carry out on-wafer low frequency (LF) noise measurement was proposed and performed. Low frequency noise measurements were performed using different devices such as InP-based heterojunction bipolar transistors (HBTs) and InP/InGaAs metamorphic HBTs on GaAs. The study enables us to gain a fundamental understanding on mechanism of the low frequency noise in these novel devices. The correlations between LF noise and device material quality and reliability were investigated.