On-wafer characterization of low frequency noise in advanced III-V heterojunction bipolar transistors (HBTs)

On-wafer characterization of low frequency noise in advanced III-V heterojunction bipolar transistors (HBTs)

In this project, modification of our current low frequency noise setup by including a probe station to carry out on-wafer low frequency (LF) noise measurement was proposed and performed. Low frequency noise measurements were performed using different devices such as InP-based heterojunction bipola...

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Bibliographic Details
Main Author: Wang, Hong
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Online Access:http://hdl.handle.net/10356/14174
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this project, modification of our current low frequency noise setup by including a probe station to carry out on-wafer low frequency (LF) noise measurement was proposed and performed. Low frequency noise measurements were performed using different devices such as InP-based heterojunction bipolar transistors (HBTs) and InP/InGaAs metamorphic HBTs on GaAs. The study enables us to gain a fundamental understanding on mechanism of the low frequency noise in these novel devices. The correlations between LF noise and device material quality and reliability were investigated.

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