Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | https://hdl.handle.net/10356/3833 |
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| Institution: | Nanyang Technological University |