Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)

• المؤلف الرئيسي: Yang, Hong
• مؤلفون آخرون: K. Radhakrishnan
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/3833
• المؤسسة: Nanyang Technological University

High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements...