Development of thin film structures for heterojunction bipolar transistors (HBTs)

Development of thin film structures for heterojunction bipolar transistors (HBTs)

In this study, MBE growth optimization for producing excellent device quality heterostructures has been reported, starting from single GaAs epi-layer. Based on this experience, several high electron mobility transistor devices have been fabricated and characterized.

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Bibliographic Details
Main Authors: Radhakrishnan, K., Yoon, Soon Fatt., Tse, Man Siu.
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:http://hdl.handle.net/10356/2936
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Institution: Nanyang Technological University
Description
Summary:In this study, MBE growth optimization for producing excellent device quality heterostructures has been reported, starting from single GaAs epi-layer. Based on this experience, several high electron mobility transistor devices have been fabricated and characterized.

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