Development of thin film structures for heterojunction bipolar transistors (HBTs)

In this study, MBE growth optimization for producing excellent device quality heterostructures has been reported, starting from single GaAs epi-layer. Based on this experience, several high electron mobility transistor devices have been fabricated and characterized.

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Bibliographic Details
Main Authors:	Radhakrishnan, K., Yoon, Soon Fatt., Tse, Man Siu.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Research Report
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:	http://hdl.handle.net/10356/2936
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-2936
record_format	dspace
spelling	sg-ntu-dr.10356-29362023-03-04T03:24:02Z Development of thin film structures for heterojunction bipolar transistors (HBTs) Radhakrishnan, K. Yoon, Soon Fatt. Tse, Man Siu. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits In this study, MBE growth optimization for producing excellent device quality heterostructures has been reported, starting from single GaAs epi-layer. Based on this experience, several high electron mobility transistor devices have been fabricated and characterized. RP 23/93 2008-09-17T09:17:39Z 2008-09-17T09:17:39Z 1997 1997 Research Report http://hdl.handle.net/10356/2936 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Radhakrishnan, K. Yoon, Soon Fatt. Tse, Man Siu. Development of thin film structures for heterojunction bipolar transistors (HBTs)
description	In this study, MBE growth optimization for producing excellent device quality heterostructures has been reported, starting from single GaAs epi-layer. Based on this experience, several high electron mobility transistor devices have been fabricated and characterized.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Radhakrishnan, K. Yoon, Soon Fatt. Tse, Man Siu.
format	Research Report
author	Radhakrishnan, K. Yoon, Soon Fatt. Tse, Man Siu.
author_sort	Radhakrishnan, K.
title	Development of thin film structures for heterojunction bipolar transistors (HBTs)
title_short	Development of thin film structures for heterojunction bipolar transistors (HBTs)
title_full	Development of thin film structures for heterojunction bipolar transistors (HBTs)
title_fullStr	Development of thin film structures for heterojunction bipolar transistors (HBTs)
title_full_unstemmed	Development of thin film structures for heterojunction bipolar transistors (HBTs)
title_sort	development of thin film structures for heterojunction bipolar transistors (hbts)
publishDate	2008
url	http://hdl.handle.net/10356/2936
_version_	1759857199838920704

Development of thin film structures for heterojunction bipolar transistors (HBTs)

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