Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE

Lightly Si-doped molecular beam epitaxy (MBE) GaAs layers have been characterized using Hall effect and low temperature (4.2 K) photoluminescence (PL) measurements. The correlation between As effusion cell temperature and residual CO vapor intensity, oval defect density, C acceptor concentration and...

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書目詳細資料
主要作者: Li, Chaoyong.
其他作者: Zhang, Dao Hua
格式: Theses and Dissertations
語言:English
出版: 2009
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在線閱讀:http://hdl.handle.net/10356/19632
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