Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
Lightly Si-doped molecular beam epitaxy (MBE) GaAs layers have been characterized using Hall effect and low temperature (4.2 K) photoluminescence (PL) measurements. The correlation between As effusion cell temperature and residual CO vapor intensity, oval defect density, C acceptor concentration and...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/19632 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Lightly Si-doped molecular beam epitaxy (MBE) GaAs layers have been characterized using Hall effect and low temperature (4.2 K) photoluminescence (PL) measurements. The correlation between As effusion cell temperature and residual CO vapor intensity, oval defect density, C acceptor concentration and electrical properties of lightly Si-doped GaAs layers has been investigated. As cell was found to be one of the sources for CO vapor. The residual CO vapor intensity was found to be proportional to the C acceptor concentration incorporated into the film during growth. The PL data indicate that the higher CO vapor pressure in the residual gasses, the more the C acceptors existed in the film. A new reaction between Ga and CO vapor on hot Ga cell surface has been suggested for the formation of oval defects, and the C generated from this reaction may enhance C acceptor concentration of the grown GaAs materials. |
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