Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
Lightly Si-doped molecular beam epitaxy (MBE) GaAs layers have been characterized using Hall effect and low temperature (4.2 K) photoluminescence (PL) measurements. The correlation between As effusion cell temperature and residual CO vapor intensity, oval defect density, C acceptor concentration and...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/19632 |
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| Institution: | Nanyang Technological University |
| Language: | English |