Characterisation of Be-doped GaInAs/AlGaAs multiple quantum well structures and GaInAsP layers grown by solid source molecular beam epitaxy

• المؤلف الرئيسي: Shi, Wei.
• مؤلفون آخرون: Zhang, Dao Hua
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/3246
• المؤسسة: Nanyang Technological University

Electrical, optical and structural properties of the Be-doped GalnAs/AlGaAs strained multiple quantum-well structures (MQWs) with different doping densities in the GalnAs wells, were systematically investigated. Extensive optical characterisation revealed that higher Be-doping densities in the well...