Characterisation of Be-doped GaInAs/AlGaAs multiple quantum well structures and GaInAsP layers grown by solid source molecular beam epitaxy

Characterisation of Be-doped GaInAs/AlGaAs multiple quantum well structures and GaInAsP layers grown by solid source molecular beam epitaxy

Electrical, optical and structural properties of the Be-doped GalnAs/AlGaAs strained multiple quantum-well structures (MQWs) with different doping densities in the GalnAs wells, were systematically investigated. Extensive optical characterisation revealed that higher Be-doping densities in the well...

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Bibliographic Details
Main Author: Shi, Wei.
Other Authors: Zhang, Dao Hua
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:http://hdl.handle.net/10356/3246
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Institution: Nanyang Technological University

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http://hdl.handle.net/10356/3246

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