Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
Lightly Si-doped molecular beam epitaxy (MBE) GaAs layers have been characterized using Hall effect and low temperature (4.2 K) photoluminescence (PL) measurements. The correlation between As effusion cell temperature and residual CO vapor intensity, oval defect density, C acceptor concentration and...
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2009
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/19632 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Be the first to leave a comment!