Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate

• المؤلف الرئيسي: Loke, Wan Khai.
• مؤلفون آخرون: Yoon, Soon Fatt
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/4799

The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique.