Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate

The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique.

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Bibliographic Details
Main Author:	Loke, Wan Khai.
Other Authors:	Yoon, Soon Fatt
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:	http://hdl.handle.net/10356/4799
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-4799
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spelling	sg-ntu-dr.10356-47992023-07-04T16:00:39Z Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate Loke, Wan Khai. Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique. Doctor of Philosophy (EEE) 2008-09-17T09:58:58Z 2008-09-17T09:58:58Z 2003 2003 Thesis http://hdl.handle.net/10356/4799 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Loke, Wan Khai. Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
description	The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique.
author2	Yoon, Soon Fatt
author_facet	Yoon, Soon Fatt Loke, Wan Khai.
format	Theses and Dissertations
author	Loke, Wan Khai.
author_sort	Loke, Wan Khai.
title	Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
title_short	Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
title_full	Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
title_fullStr	Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
title_full_unstemmed	Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
title_sort	molecular beam epitaxial growth of gaas/algaas heterostructure and nitrogen-containing alloy on patterned substrate
publishDate	2008
url	http://hdl.handle.net/10356/4799
_version_	1772827295001608192

Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate

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