Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate

• Main Author: Loke, Wan Khai.
• Other Authors: Yoon, Soon Fatt
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
• Online Access: http://hdl.handle.net/10356/4799
• Institution: Nanyang Technological University

The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique.