Growth, fabrication and characterisation of GaAs and InP-based HEMT structures

• Main Author: Zheng, Hai Qun.
• Other Authors: K Radhakrishnan
• Format: Theses and Dissertations
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: http://hdl.handle.net/10356/19601
• Institution: Nanyang Technological University

This thesis presents the material growth, device fabrication and characterisation of GaAs-based pseudomorphic HEMTs. InP-based HEMT device fabrication process and device characterisation is also included. MBE growth parameter optimisation was carried out, mainly on the influence of V/III flux rati...