Growth, fabrication and characterisation of GaAs and InP-based HEMT structures
This thesis presents the material growth, device fabrication and characterisation of GaAs-based pseudomorphic HEMTs. InP-based HEMT device fabrication process and device characterisation is also included. MBE growth parameter optimisation was carried out, mainly on the influence of V/III flux rati...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/19601 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | This thesis presents the material growth, device fabrication and characterisation of GaAs-based pseudomorphic HEMTs. InP-based HEMT device fabrication process and device characterisation is also included.
MBE growth parameter optimisation was carried out, mainly on the influence of V/III
flux ratio, substrate temperature and growth interruptions. It was found that using lower
As flux, lower substrate temperature during 8-doping and proper growth interruption
before and after the channel layer will result in better material quality in terms of higher
2DEG mobility. Conventional 8-doped P-HEMT samples were successfully grown with
the mobility of 5860 cm2/v.s at a 2DEG concentration of 2.28 x 10'2cm-2. |
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