Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique

• Main Author: Vicknesh Sahmuganathan
• Other Authors: Tang, Xiaohong
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: http://hdl.handle.net/10356/3631
• Institution: Nanyang Technological University

This thesis presents the Inductively Coupled Plasma (ICP) Etching Characteristics of InxGal-,As and InP grown by metal organic-chemical vapor deposition (MOCVD). The ICP source produces high-density plasma with ion energy and ion flux operated separately for better uniform etching on large diamet...