Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique

• 主要作者: Vicknesh Sahmuganathan
• 其他作者: Tang, Xiaohong
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• 在線閱讀: http://hdl.handle.net/10356/3631

This thesis presents the Inductively Coupled Plasma (ICP) Etching Characteristics of InxGal-,As and InP grown by metal organic-chemical vapor deposition (MOCVD). The ICP source produces high-density plasma with ion energy and ion flux operated separately for better uniform etching on large diamet...