Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique

Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique

This thesis presents the Inductively Coupled Plasma (ICP) Etching Characteristics of InxGal-,As and InP grown by metal organic-chemical vapor deposition (MOCVD). The ICP source produces high-density plasma with ion energy and ion flux operated separately for better uniform etching on large diamet...

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Bibliographic Details
Main Author: Vicknesh Sahmuganathan
Other Authors: Tang, Xiaohong
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:http://hdl.handle.net/10356/3631
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Institution: Nanyang Technological University
Description
Summary:This thesis presents the Inductively Coupled Plasma (ICP) Etching Characteristics of InxGal-,As and InP grown by metal organic-chemical vapor deposition (MOCVD). The ICP source produces high-density plasma with ion energy and ion flux operated separately for better uniform etching on large diameter substrates. The studies focused on ICP etching characteristics of InxGa1-xAs and InP materials with variety of process parameters, e.g. different etch gases, gas flows, ICP power, and RIE power, etc. Effect of specific gas chemistry on the ICP etching on InxGal-xAs samples with different indium compositions 'x' and InP material has been

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