Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma

• المؤلفون الرئيسيون: Zhang, X. H., Nie, Dong, Mei, Ting, Djie, Hery Susanto, Ooi, Boon Siew
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/91847; http://hdl.handle.net/10220/6407
• المؤسسة: Nanyang Technological University

The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength u...