Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure
Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature l...
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Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2010
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/99769 http://hdl.handle.net/10220/6419 |
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Institution: | Nanyang Technological University |
Language: | English |