Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

• Main Authors: Tang, Xiaohong, Mei, Ting, Wang, Yixin, Djie, Hery Susanto, Chin, Mee Koy, Nie, Dong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: https://hdl.handle.net/10356/99769; http://hdl.handle.net/10220/6419
• Institution: Nanyang Technological University

Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600 degrees celcius, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 degrees celcius when the group V sublattice interdiffusion becomes appreciable.