Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature l...

Full description

Saved in:
Bibliographic Details
Main Authors: Tang, Xiaohong, Mei, Ting, Wang, Yixin, Djie, Hery Susanto, Chin, Mee Koy, Nie, Dong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:https://hdl.handle.net/10356/99769
http://hdl.handle.net/10220/6419
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600  degrees celcius, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 degrees celcius when the group V sublattice interdiffusion becomes appreciable.

Similar Items