Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique

Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique

This thesis presents the Inductively Coupled Plasma (ICP) Etching Characteristics of InxGal-,As and InP grown by metal organic-chemical vapor deposition (MOCVD). The ICP source produces high-density plasma with ion energy and ion flux operated separately for better uniform etching on large diamet...

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Main Author: Vicknesh Sahmuganathan
Other Authors: Tang, Xiaohong
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:http://hdl.handle.net/10356/3631
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-36312023-07-04T15:27:56Z Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique Vicknesh Sahmuganathan Tang, Xiaohong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials This thesis presents the Inductively Coupled Plasma (ICP) Etching Characteristics of InxGal-,As and InP grown by metal organic-chemical vapor deposition (MOCVD). The ICP source produces high-density plasma with ion energy and ion flux operated separately for better uniform etching on large diameter substrates. The studies focused on ICP etching characteristics of InxGa1-xAs and InP materials with variety of process parameters, e.g. different etch gases, gas flows, ICP power, and RIE power, etc. Effect of specific gas chemistry on the ICP etching on InxGal-xAs samples with different indium compositions 'x' and InP material has been Master of Science 2008-09-17T09:34:04Z 2008-09-17T09:34:04Z 2005 2005 Thesis http://hdl.handle.net/10356/3631 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Vicknesh Sahmuganathan
Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique
description This thesis presents the Inductively Coupled Plasma (ICP) Etching Characteristics of InxGal-,As and InP grown by metal organic-chemical vapor deposition (MOCVD). The ICP source produces high-density plasma with ion energy and ion flux operated separately for better uniform etching on large diameter substrates. The studies focused on ICP etching characteristics of InxGa1-xAs and InP materials with variety of process parameters, e.g. different etch gases, gas flows, ICP power, and RIE power, etc. Effect of specific gas chemistry on the ICP etching on InxGal-xAs samples with different indium compositions 'x' and InP material has been
author2 Tang, Xiaohong
author_facet Tang, Xiaohong
Vicknesh Sahmuganathan
format Theses and Dissertations
author Vicknesh Sahmuganathan
author_sort Vicknesh Sahmuganathan
title Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique
title_short Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique
title_full Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique
title_fullStr Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique
title_full_unstemmed Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique
title_sort etching characteristics of inxga1-xas and inp by inductively coupled plasma etching (icp) technique
publishDate 2008
url http://hdl.handle.net/10356/3631
_version_ 1772828417930035200

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