Growth, fabrication and characterisation of GaAs and InP-based HEMT structures

• Main Author: Zheng, Hai Qun.
• Other Authors: K Radhakrishnan
• Format: Theses and Dissertations
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: http://hdl.handle.net/10356/19601
• Institution: Nanyang Technological University

This thesis presents the material growth, device fabrication and characterisation of GaAs-based pseudomorphic HEMTs. InP-based HEMT device fabrication process and device characterisation is also included. MBE growth parameter optimisation was carried out, mainly on the influence of V/III flux ratio, substrate temperature and growth interruptions. It was found that using lower As flux, lower substrate temperature during 8-doping and proper growth interruption before and after the channel layer will result in better material quality in terms of higher 2DEG mobility. Conventional 8-doped P-HEMT samples were successfully grown with the mobility of 5860 cm2/v.s at a 2DEG concentration of 2.28 x 10'2cm-2.