Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology
The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities.
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| Format: | Research Report |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/2988 |
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| Institution: | Nanyang Technological University |