InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study

• Main Authors: D’Costa, Vijay Richard, Loke, Wan Khai, Zhou, Qian, Yoon, Soon Fatt, Yeo, Yee-Chia
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Electrical and Electronic Engineering; Semiconductor Science and Technology
• Online Access: https://hdl.handle.net/10356/80596; http://hdl.handle.net/10220/40554
• Institution: Nanyang Technological University

We investigated the optical properties of disordered In0.52Ga0.48P alloys by spectroscopic ellipsometry in the far-infrared to ultraviolet energy range (0.037–5.1 eV). The alloys were grown on Ge (100) substrate by solid-source molecular beam epitaxy. The far-infrared dielectric function reveals two...