Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates

• Main Authors: Wang, Bing, Wang, Cong, Lee, Kwang Hong, Bao, Shuyu, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, Fitzgerald, Eugene A., Michel, Jurgen
• Other Authors: Jeon, Heonsu
• Format: Conference or Workshop Item
• Language: English
• Published: 2018
• Subjects: Ge-on-Si Substrate; InGaP LEDs; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/90207; http://hdl.handle.net/10220/47211
• Institution: Nanyang Technological University

The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials...