The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

• Main Authors: Wang, Bing, Lee, Kwang Hong, Wang, Cong, Wang, Yue, Made, Riko I., Sasangka, Wardhana Aji, Nguyen, Viet Cuong, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, Fitzgerald, Eugene A., Michel, Jurgen
• Other Authors: Eldada, Louay A.
• Format: Article
• Language: English
• Published: 2019
• Subjects: Engineering::Electrical and electronic engineering; InGaP LED; CMOS Integration
• Online Access: https://hdl.handle.net/10356/105701; http://hdl.handle.net/10220/49553; http://dx.doi.org/10.1117/12.2252030
• Institution: Nanyang Technological University

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work...