Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source

• Main Authors: Wang, S. Z., Yoon, Soon Fatt, Loke, Wan Khai, Ng, T. K., Fan, Weijun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100520; http://hdl.handle.net/10220/18008
• Institution: Nanyang Technological University

A modified mode for GaAsN growth using solid-source molecular beam epitaxy in conjunction with dispersive nitrogen to avoid the bombardment effect of energetic nitrogen ions is reported. High-quality GaAsN epilayers and good GaAsN/GaAs interfaces were achieved using this growth mode. The results...