Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source
A modified mode for GaAsN growth using solid-source molecular beam epitaxy in conjunction with dispersive nitrogen to avoid the bombardment effect of energetic nitrogen ions is reported. High-quality GaAsN epilayers and good GaAsN/GaAs interfaces were achieved using this growth mode. The results...
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sg-ntu-dr.10356-1005202020-03-07T14:02:39Z Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source Wang, S. Z. Yoon, Soon Fatt Loke, Wan Khai Ng, T. K. Fan, Weijun School of Electrical and Electronic Engineering Singapore-Massachusetts Institute of Technology (MIT) Alliance DRNTU::Engineering::Electrical and electronic engineering A modified mode for GaAsN growth using solid-source molecular beam epitaxy in conjunction with dispersive nitrogen to avoid the bombardment effect of energetic nitrogen ions is reported. High-quality GaAsN epilayers and good GaAsN/GaAs interfaces were achieved using this growth mode. The results suggest that the surface of samples grown using dispersive nitrogen has fewer defects than those grown using the direct nitrogen beam. The optical quality of GaAsN samples grown using the dispersive nitrogen technique was found to improve, due to the lower nitrogen ion bombardment effect. This growth technique is expected to be advantageous for growing high-quality GaAsN materials for optoelectronic applications. Published version 2013-12-04T03:27:24Z 2019-12-06T20:23:58Z 2013-12-04T03:27:24Z 2019-12-06T20:23:58Z 2002 2002 Journal Article Wang, S. Z., Yoon, S. F., Loke, W. K., Ng, T. K., & Fan, W. (2002). Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source. Journal of vacuum science & technology B : microelectronics and nanometer structures, 20(4), 1364. 0734-211X https://hdl.handle.net/10356/100520 http://hdl.handle.net/10220/18008 10.1116/1.1490391 en Journal of vacuum science & technology B : microelectronics and nanometer structures © 2002 American Vacuum Society.This paper was published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1116/1.1490391]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 4 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Wang, S. Z. Yoon, Soon Fatt Loke, Wan Khai Ng, T. K. Fan, Weijun Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source |
| description |
A modified mode for GaAsN growth using solid-source molecular beam epitaxy in conjunction with
dispersive nitrogen to avoid the bombardment effect of energetic nitrogen ions is reported.
High-quality GaAsN epilayers and good GaAsN/GaAs interfaces were achieved using this growth
mode. The results suggest that the surface of samples grown using dispersive nitrogen has fewer
defects than those grown using the direct nitrogen beam. The optical quality of GaAsN samples
grown using the dispersive nitrogen technique was found to improve, due to the lower nitrogen ion
bombardment effect. This growth technique is expected to be advantageous for growing
high-quality GaAsN materials for optoelectronic applications. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Wang, S. Z. Yoon, Soon Fatt Loke, Wan Khai Ng, T. K. Fan, Weijun |
| format |
Article |
| author |
Wang, S. Z. Yoon, Soon Fatt Loke, Wan Khai Ng, T. K. Fan, Weijun |
| author_sort |
Wang, S. Z. |
| title |
Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source |
| title_short |
Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source |
| title_full |
Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source |
| title_fullStr |
Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source |
| title_full_unstemmed |
Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source |
| title_sort |
improved gan[sub x]as[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/100520 http://hdl.handle.net/10220/18008 |
| _version_ |
1681036049396006912 |