Development of electron beam lithography process for the design and fabrication of sub-micron GaAs-based RF devices

• Main Author: Yoon, Soon Fatt.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
• Online Access: http://hdl.handle.net/10356/3038
• Institution: Nanyang Technological University

This report presents the device fabrication and characterisation of the InxGa1-xP/In0.20Ga0.80As HEMT.