Characterization of compound semiconductor for quantum well infrared photodetectors

In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of th...

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Bibliographic Details
Main Author: Zhang, Dao Hua
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/2826
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Institution: Nanyang Technological University