Characterization of compound semiconductor for quantum well infrared photodetectors
In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of th...
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| Format: | Research Report |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/2826 |
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| Institution: | Nanyang Technological University |
| Summary: | In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of these two kinds are fabricated. |
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