Characterization of compound semiconductor for quantum well infrared photodetectors

Characterization of compound semiconductor for quantum well infrared photodetectors

In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of th...

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Main Author: Zhang, Dao Hua
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/2826
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-28262023-03-04T03:22:19Z Characterization of compound semiconductor for quantum well infrared photodetectors Zhang, Dao Hua School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of these two kinds are fabricated. RG 27/98 2008-09-17T09:15:16Z 2008-09-17T09:15:16Z 2002 2002 Research Report http://hdl.handle.net/10356/2826 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Zhang, Dao Hua
Characterization of compound semiconductor for quantum well infrared photodetectors
description In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of these two kinds are fabricated.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhang, Dao Hua
format Research Report
author Zhang, Dao Hua
author_sort Zhang, Dao Hua
title Characterization of compound semiconductor for quantum well infrared photodetectors
title_short Characterization of compound semiconductor for quantum well infrared photodetectors
title_full Characterization of compound semiconductor for quantum well infrared photodetectors
title_fullStr Characterization of compound semiconductor for quantum well infrared photodetectors
title_full_unstemmed Characterization of compound semiconductor for quantum well infrared photodetectors
title_sort characterization of compound semiconductor for quantum well infrared photodetectors
publishDate 2008
url http://hdl.handle.net/10356/2826
_version_ 1759855645879697408

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