Accurate and scalable RF interconnect model for silicon-based RFIC applications
A new figure of merit, intrinsic factor for interconnects, is proposed to provide insights as to how back-end metallization influences the performance of radio frequency integrated circuits. An accurate and scalable double-radio frequency interconnect model, continuous across physical dimensions of...
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Main Authors: | , , , , |
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其他作者: | |
格式: | Article |
語言: | English |
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2009
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主題: | |
在線閱讀: | https://hdl.handle.net/10356/93778 http://hdl.handle.net/10220/5338 |
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機構: | Nanyang Technological University |
語言: | English |