Accurate and scalable RF interconnect model for silicon-based RFIC applications

• Main Authors: Sia, Choon Beng, Ong, Beng Hwee, Yeo, Kiat Seng, Ma, Jianguo, Do, Manh Anh
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/93778; http://hdl.handle.net/10220/5338
• Institution: Nanyang Technological University

A new figure of merit, intrinsic factor for interconnects, is proposed to provide insights as to how back-end metallization influences the performance of radio frequency integrated circuits. An accurate and scalable double-radio frequency interconnect model, continuous across physical dimensions of...