Accurate and scalable RF interconnect model for silicon-based RFIC applications

Accurate and scalable RF interconnect model for silicon-based RFIC applications

A new figure of merit, intrinsic factor for interconnects, is proposed to provide insights as to how back-end metallization influences the performance of radio frequency integrated circuits. An accurate and scalable double-radio frequency interconnect model, continuous across physical dimensions of...

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Bibliographic Details
Main Authors: Sia, Choon Beng, Ong, Beng Hwee, Yeo, Kiat Seng, Ma, Jianguo, Do, Manh Anh
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/93778
http://hdl.handle.net/10220/5338
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Institution: Nanyang Technological University
Language: English
Description
Summary:A new figure of merit, intrinsic factor for interconnects, is proposed to provide insights as to how back-end metallization influences the performance of radio frequency integrated circuits. An accurate and scalable double-radio frequency interconnect model, continuous across physical dimensions of width and length, is presented to demonstrate reliable predictions of interconnect characteristics up to 10 GHz. Using this interconnect model in gigahertz amplifier and voltage-controlled oscillator circuit simulations yields excellent correlations between simulated and on-wafer measured circuit results.

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