Accurate and scalable RF interconnect model for silicon-based RFIC applications

Accurate and scalable RF interconnect model for silicon-based RFIC applications

A new figure of merit, intrinsic factor for interconnects, is proposed to provide insights as to how back-end metallization influences the performance of radio frequency integrated circuits. An accurate and scalable double-radio frequency interconnect model, continuous across physical dimensions of...

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Main Authors: Sia, Choon Beng, Ong, Beng Hwee, Yeo, Kiat Seng, Ma, Jianguo, Do, Manh Anh
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/93778
http://hdl.handle.net/10220/5338
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-937782020-03-07T13:57:25Z Accurate and scalable RF interconnect model for silicon-based RFIC applications Sia, Choon Beng Ong, Beng Hwee Yeo, Kiat Seng Ma, Jianguo Do, Manh Anh School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering A new figure of merit, intrinsic factor for interconnects, is proposed to provide insights as to how back-end metallization influences the performance of radio frequency integrated circuits. An accurate and scalable double-radio frequency interconnect model, continuous across physical dimensions of width and length, is presented to demonstrate reliable predictions of interconnect characteristics up to 10 GHz. Using this interconnect model in gigahertz amplifier and voltage-controlled oscillator circuit simulations yields excellent correlations between simulated and on-wafer measured circuit results. Published version 2009-07-28T08:45:26Z 2019-12-06T18:45:25Z 2009-07-28T08:45:26Z 2019-12-06T18:45:25Z 2005 2005 Journal Article Sia, C. B., Ong, B. H., Yeo, K. S., Ma, J. G., & Do, M. A. (2005). Accurate and scalable RF interconnect model for silicon-based RFIC applications. IEEE Transactions on Microwave Theory and Techniques, 53(9), 3035-3044. 0018-9480 https://hdl.handle.net/10356/93778 http://hdl.handle.net/10220/5338 10.1109/TMTT.2005.854218 en IEEE transactions on microwave theory and techniques © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 10 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Sia, Choon Beng
Ong, Beng Hwee
Yeo, Kiat Seng
Ma, Jianguo
Do, Manh Anh
Accurate and scalable RF interconnect model for silicon-based RFIC applications
description A new figure of merit, intrinsic factor for interconnects, is proposed to provide insights as to how back-end metallization influences the performance of radio frequency integrated circuits. An accurate and scalable double-radio frequency interconnect model, continuous across physical dimensions of width and length, is presented to demonstrate reliable predictions of interconnect characteristics up to 10 GHz. Using this interconnect model in gigahertz amplifier and voltage-controlled oscillator circuit simulations yields excellent correlations between simulated and on-wafer measured circuit results.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Sia, Choon Beng
Ong, Beng Hwee
Yeo, Kiat Seng
Ma, Jianguo
Do, Manh Anh
format Article
author Sia, Choon Beng
Ong, Beng Hwee
Yeo, Kiat Seng
Ma, Jianguo
Do, Manh Anh
author_sort Sia, Choon Beng
title Accurate and scalable RF interconnect model for silicon-based RFIC applications
title_short Accurate and scalable RF interconnect model for silicon-based RFIC applications
title_full Accurate and scalable RF interconnect model for silicon-based RFIC applications
title_fullStr Accurate and scalable RF interconnect model for silicon-based RFIC applications
title_full_unstemmed Accurate and scalable RF interconnect model for silicon-based RFIC applications
title_sort accurate and scalable rf interconnect model for silicon-based rfic applications
publishDate 2009
url https://hdl.handle.net/10356/93778
http://hdl.handle.net/10220/5338
_version_ 1681044618668408832

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